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Drain side pocket-based Germanium nanotube tunnel FET for low power complementary ternary inverter

Navneet Kaur Saini, Nitish Kumar, Raghvendra Sahai Saxena, Anuj Dhawan, M. Jagadesh Kumar. Drain side pocket-based Germanium nanotube tunnel FET for low power complementary ternary inverter. Microelectronics Journal, 160:106692, 2025. [doi]

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Navneet Kaur Saini

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Nitish Kumar

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Raghvendra Sahai Saxena

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Anuj Dhawan

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M. Jagadesh Kumar

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