Drain side pocket-based Germanium nanotube tunnel FET for low power complementary ternary inverter

Navneet Kaur Saini, Nitish Kumar, Raghvendra Sahai Saxena, Anuj Dhawan, M. Jagadesh Kumar. Drain side pocket-based Germanium nanotube tunnel FET for low power complementary ternary inverter. Microelectronics Journal, 160:106692, 2025. [doi]

Abstract

Abstract is missing.