Mario Sako, Yoshihisa Watanabe, Takao Nakajima, Jumpei Sato, Kazuyoshi Muraoka, Masaki Fujiu, Fumihiro Kono, Michio Nakagawa, Masami Masuda, Koji Kato, Yuri Terada, Yuki Shimizu, Mitsuaki Honma, Akihiro Imamoto, Tomoko Araya, Hayato Konno, Takuya Okanaga, Tomofumi Fujimura, Xiaoqing Wang, Mai Muramoto, Masahiro Kamoshida, Masatoshi Kohno, Yoshinao Suzuki, Tomoharu Hashiguchi, Tsukasa Kobayashi, Masashi Yamaoka, Ryuji Yamashita. A Low Power 64 Gb MLC NAND-Flash Memory in 15 nm CMOS Technology. J. Solid-State Circuits, 51(1):196-203, 2016. [doi]
@article{SakoWNSMFKNMKTS16,
title = {A Low Power 64 Gb MLC NAND-Flash Memory in 15 nm CMOS Technology},
author = {Mario Sako and Yoshihisa Watanabe and Takao Nakajima and Jumpei Sato and Kazuyoshi Muraoka and Masaki Fujiu and Fumihiro Kono and Michio Nakagawa and Masami Masuda and Koji Kato and Yuri Terada and Yuki Shimizu and Mitsuaki Honma and Akihiro Imamoto and Tomoko Araya and Hayato Konno and Takuya Okanaga and Tomofumi Fujimura and Xiaoqing Wang and Mai Muramoto and Masahiro Kamoshida and Masatoshi Kohno and Yoshinao Suzuki and Tomoharu Hashiguchi and Tsukasa Kobayashi and Masashi Yamaoka and Ryuji Yamashita},
year = {2016},
doi = {10.1109/JSSC.2015.2458972},
url = {http://dx.doi.org/10.1109/JSSC.2015.2458972},
researchr = {https://researchr.org/publication/SakoWNSMFKNMKTS16},
cites = {0},
citedby = {0},
journal = {J. Solid-State Circuits},
volume = {51},
number = {1},
pages = {196-203},
}