Aly E. Salama, Sherif M. Sharroush, Mahmoud Y. Fekry. Increasing the Sense Margin of 1T-1C Ferroelectric Random-Access Memories. In International Symposium on Circuits and Systems (ISCAS 2007), 27-20 May 2007, New Orleans, Louisiana, USA. pages 2268-2271, IEEE, 2007. [doi]
@inproceedings{SalamaSF07,
title = {Increasing the Sense Margin of 1T-1C Ferroelectric Random-Access Memories},
author = {Aly E. Salama and Sherif M. Sharroush and Mahmoud Y. Fekry},
year = {2007},
doi = {10.1109/ISCAS.2007.378735},
url = {http://doi.ieeecomputersociety.org/10.1109/ISCAS.2007.378735},
tags = {e-science},
researchr = {https://researchr.org/publication/SalamaSF07},
cites = {0},
citedby = {0},
pages = {2268-2271},
booktitle = {International Symposium on Circuits and Systems (ISCAS 2007), 27-20 May 2007, New Orleans, Louisiana, USA},
publisher = {IEEE},
}