Jebreel M. Salem, Dong Sam Ha. A high temperature active GaN-HEMT downconversion mixer for downhole communications. In IEEE International Symposium on Circuits and Systems, ISCAS 2016, Montréal, QC, Canada, May 22-25, 2016. pages 946-949, IEEE, 2016. [doi]
@inproceedings{SalemH16-0,
title = {A high temperature active GaN-HEMT downconversion mixer for downhole communications},
author = {Jebreel M. Salem and Dong Sam Ha},
year = {2016},
doi = {10.1109/ISCAS.2016.7527398},
url = {http://dx.doi.org/10.1109/ISCAS.2016.7527398},
researchr = {https://researchr.org/publication/SalemH16-0},
cites = {0},
citedby = {0},
pages = {946-949},
booktitle = {IEEE International Symposium on Circuits and Systems, ISCAS 2016, Montréal, QC, Canada, May 22-25, 2016},
publisher = {IEEE},
isbn = {978-1-4799-5341-7},
}