The following publications are possibly variants of this publication:
- A high temperature variable gain amplifier based on GaN HEMT devices for downhole communicationsMohammed Ehteshamuddin, Jebreel M. Salem, Dong Sam Ha. iscas 2017: 1-4 [doi]
- High temperature VCO based on GaN devices for downhole communicationsTianming Feng, Jebreel M. Salem, Dong Sam Ha. iscas 2017: 1-4 [doi]
- High temperature RF transceiver design for high-speed downhole communicationsJebreel M. Salem, Fariborz Lohrabi Pour, Dong Sam Ha. mj, 129:105609, 2022. [doi]
- A High-Temperature Model for GaN-HEMT Transistors and its Application to Resistive Mixer DesignJebreel M. Salem, Fariborz Lohrabi Pour, Dong Sam Ha. tcasI, 68(2):581-591, 2021. [doi]