P. Salmen, M. W. Feil, Katja Waschneck, Hans Reisinger, Gerald Rescher, Thomas Aichinger. A new test procedure to realistically estimate end-of-life electrical parameter stability of SiC MOSFETs in switching operation. In IEEE International Reliability Physics Symposium, IRPS 2021, Monterey, CA, USA, March 21-25, 2021. pages 1-7, IEEE, 2021. [doi]
Abstract is missing.