Low-voltage read/write circuit design for transistorless ReRAM crossbar arrays in 180nm CMOS technology - researchr publication authors

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Jury Sandrini, Tugba Demirci, Maxime Thammasack, Davide Sacchetto, Yusuf Leblebici. Low-voltage read/write circuit design for transistorless ReRAM crossbar arrays in 180nm CMOS technology. In 2015 IEEE International Symposium on Circuits and Systems, ISCAS 2015, Lisbon, Portugal, May 24-27, 2015. pages 9-12, IEEE, 2015. [doi]

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