Low-voltage read/write circuit design for transistorless ReRAM crossbar arrays in 180nm CMOS technology

Jury Sandrini, Tugba Demirci, Maxime Thammasack, Davide Sacchetto, Yusuf Leblebici. Low-voltage read/write circuit design for transistorless ReRAM crossbar arrays in 180nm CMOS technology. In 2015 IEEE International Symposium on Circuits and Systems, ISCAS 2015, Lisbon, Portugal, May 24-27, 2015. pages 9-12, IEEE, 2015. [doi]

@inproceedings{SandriniDTSL15,
  title = {Low-voltage read/write circuit design for transistorless ReRAM crossbar arrays in 180nm CMOS technology},
  author = {Jury Sandrini and Tugba Demirci and Maxime Thammasack and Davide Sacchetto and Yusuf Leblebici},
  year = {2015},
  doi = {10.1109/ISCAS.2015.7168557},
  url = {http://dx.doi.org/10.1109/ISCAS.2015.7168557},
  researchr = {https://researchr.org/publication/SandriniDTSL15},
  cites = {0},
  citedby = {0},
  pages = {9-12},
  booktitle = {2015 IEEE International Symposium on Circuits and Systems, ISCAS 2015, Lisbon, Portugal, May 24-27, 2015},
  publisher = {IEEE},
  isbn = {978-1-4799-8391-9},
}