A 210-MHz 4.23 fJ Energy/Bit 1-kb Asymmetrical Schmitt-Trigger-Based SRAM Using 40-nm CMOS Process - researchr publication

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Ralph Gerard B. Sangalang, Shiva Reddy, Lean Karlo S. Tolentino, You-Wei Shen, Oliver Lexter July A. Jose, Chua-Chin Wang. A 210-MHz 4.23 fJ Energy/Bit 1-kb Asymmetrical Schmitt-Trigger-Based SRAM Using 40-nm CMOS Process. IEEE Trans. Circuits Syst. II Express Briefs, 70(10):3862-3866, October 2023. [doi]

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