A New LDMOS Transistor Macro-Modeling for Accurately Predicting Bias Dependence of Gate-Overlap Capacitance

Takashi Sato, Toshiki Kanamoto, Saiko Kobayashi, Nobuhiko Goto, Takao Sato, Hitoshi Sugihara, Hiroo Masuda. A New LDMOS Transistor Macro-Modeling for Accurately Predicting Bias Dependence of Gate-Overlap Capacitance. IEICE Transactions, 93-A(9):1605-1611, 2010. [doi]

@article{SatoKKGSSM10,
  title = {A New LDMOS Transistor Macro-Modeling for Accurately Predicting Bias Dependence of Gate-Overlap Capacitance},
  author = {Takashi Sato and Toshiki Kanamoto and Saiko Kobayashi and Nobuhiko Goto and Takao Sato and Hitoshi Sugihara and Hiroo Masuda},
  year = {2010},
  url = {http://search.ieice.org/bin/summary.php?id=e93-a_9_1605},
  tags = {modeling, macros},
  researchr = {https://researchr.org/publication/SatoKKGSSM10},
  cites = {0},
  citedby = {0},
  journal = {IEICE Transactions},
  volume = {93-A},
  number = {9},
  pages = {1605-1611},
}