Process-Induced Anomalous Current Transport in Graphene/InA1N/GaN Heterostructured Diodes - researchr publication authors

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Peter F. Satterthwaite, Ananth Saran Yalamarthy, Sam Vaziri, Miguel Munoz-Rojo, Eric Pop, Debbie G. Senesky. Process-Induced Anomalous Current Transport in Graphene/InA1N/GaN Heterostructured Diodes. In IEEE International Reliability Physics Symposium, IRPS 2019, Monterey, CA, USA, March 31 - April 4, 2019. pages 1-6, IEEE, 2019. [doi]

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