Process-Induced Anomalous Current Transport in Graphene/InA1N/GaN Heterostructured Diodes

Peter F. Satterthwaite, Ananth Saran Yalamarthy, Sam Vaziri, Miguel Munoz-Rojo, Eric Pop, Debbie G. Senesky. Process-Induced Anomalous Current Transport in Graphene/InA1N/GaN Heterostructured Diodes. In IEEE International Reliability Physics Symposium, IRPS 2019, Monterey, CA, USA, March 31 - April 4, 2019. pages 1-6, IEEE, 2019. [doi]

@inproceedings{SatterthwaiteYV19,
  title = {Process-Induced Anomalous Current Transport in Graphene/InA1N/GaN Heterostructured Diodes},
  author = {Peter F. Satterthwaite and Ananth Saran Yalamarthy and Sam Vaziri and Miguel Munoz-Rojo and Eric Pop and Debbie G. Senesky},
  year = {2019},
  doi = {10.1109/IRPS.2019.8720465},
  url = {https://doi.org/10.1109/IRPS.2019.8720465},
  researchr = {https://researchr.org/publication/SatterthwaiteYV19},
  cites = {0},
  citedby = {0},
  pages = {1-6},
  booktitle = {IEEE International Reliability Physics Symposium, IRPS 2019, Monterey, CA, USA, March 31 - April 4, 2019},
  publisher = {IEEE},
  isbn = {978-1-5386-9504-3},
}