Strontium doped hafnium oxide thin films: Wide process window for ferroelectric memories

T. Schenk, S. Mueller, U. Schroeder, R. Materlik, A. Kersch, M. Popovici, C. Adelmann, S. Van Elshocht, T. Mikolajick. Strontium doped hafnium oxide thin films: Wide process window for ferroelectric memories. In Proceedings of the European Solid-State Device Research Conference, ESSDERC 2013, Bucharest, Romania, September 16-20, 2013. pages 260-263, IEEE, 2013. [doi]

@inproceedings{SchenkMSMKPAEM13,
  title = {Strontium doped hafnium oxide thin films: Wide process window for ferroelectric memories},
  author = {T. Schenk and S. Mueller and U. Schroeder and R. Materlik and A. Kersch and M. Popovici and C. Adelmann and S. Van Elshocht and T. Mikolajick},
  year = {2013},
  doi = {10.1109/ESSDERC.2013.6818868},
  url = {http://dx.doi.org/10.1109/ESSDERC.2013.6818868},
  researchr = {https://researchr.org/publication/SchenkMSMKPAEM13},
  cites = {0},
  citedby = {0},
  pages = {260-263},
  booktitle = {Proceedings of the European Solid-State Device Research Conference, ESSDERC 2013, Bucharest, Romania, September 16-20, 2013},
  publisher = {IEEE},
}