Performance improvement of self-aligned HfO::2::/TaN and SiON/TaN nMOS transistors

T. Schram, L.-Å. Ragnarsson, G. Lujan, W. Deweerd, J. Chen, W. Tsai, K. Henson, R. J. P. Lander, J. C. Hooker, J. Vertommen. Performance improvement of self-aligned HfO::2::/TaN and SiON/TaN nMOS transistors. Microelectronics Reliability, 45(5-6):779-782, 2005. [doi]

@article{SchramRLDCTHLHV05,
  title = {Performance improvement of self-aligned HfO::2::/TaN and SiON/TaN nMOS transistors},
  author = {T. Schram and L.-Å. Ragnarsson and G. Lujan and W. Deweerd and J. Chen and W. Tsai and K. Henson and R. J. P. Lander and J. C. Hooker and J. Vertommen},
  year = {2005},
  doi = {10.1016/j.microrel.2004.11.050},
  url = {http://dx.doi.org/10.1016/j.microrel.2004.11.050},
  tags = {C++},
  researchr = {https://researchr.org/publication/SchramRLDCTHLHV05},
  cites = {0},
  citedby = {0},
  journal = {Microelectronics Reliability},
  volume = {45},
  number = {5-6},
  pages = {779-782},
}