Uwe Schroeder, Milan Pesic, Tony Schenk, H. Mulaosmanovic, Stefan Slesazeck, J. Ocker, C. Richter, E. Yurchuk, K. Khullar, J. Muller, P. Polakowski, E. D. Grimley, J. M. LeBeau, S. Flachowsky, S. Jansen, S. Kolodinski, R. van Bentum, A. Kersch, C. Kunneth, Thomas Mikolajick. Impact of field cycling on HfO2 based non-volatile memory devices. In 46th European Solid-State Device Research Conference, ESSDERC 2016, Lausanne, Switzerland, September 12-15, 2016. pages 364-368, IEEE, 2016. [doi]
@inproceedings{SchroederPSMSOR16,
title = {Impact of field cycling on HfO2 based non-volatile memory devices},
author = {Uwe Schroeder and Milan Pesic and Tony Schenk and H. Mulaosmanovic and Stefan Slesazeck and J. Ocker and C. Richter and E. Yurchuk and K. Khullar and J. Muller and P. Polakowski and E. D. Grimley and J. M. LeBeau and S. Flachowsky and S. Jansen and S. Kolodinski and R. van Bentum and A. Kersch and C. Kunneth and Thomas Mikolajick},
year = {2016},
doi = {10.1109/ESSDERC.2016.7599662},
url = {http://dx.doi.org/10.1109/ESSDERC.2016.7599662},
researchr = {https://researchr.org/publication/SchroederPSMSOR16},
cites = {0},
citedby = {0},
pages = {364-368},
booktitle = {46th European Solid-State Device Research Conference, ESSDERC 2016, Lausanne, Switzerland, September 12-15, 2016},
publisher = {IEEE},
isbn = {978-1-5090-2969-3},
}