Physics-based modeling of a bi-layer Al₂O₃/Nb₂O₅ analog memristive device - researchr publication authors

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Richard Schroedter, Eter Mgeladze, Melanie Herzig, Alon Ascoli, Stefan Slesazeck, Thomas Mikolajick, Ronald Tetzlaff. Physics-based modeling of a bi-layer Al₂O₃/Nb₂O₅ analog memristive device. In IEEE International Symposium on Circuits and Systems, ISCAS 2022, Austin, TX, USA, May 27 - June 1, 2022. pages 1097-1101, IEEE, 2022. [doi]

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