Physics-based modeling of a bi-layer Al₂O₃/Nb₂O₅ analog memristive device

Richard Schroedter, Eter Mgeladze, Melanie Herzig, Alon Ascoli, Stefan Slesazeck, Thomas Mikolajick, Ronald Tetzlaff. Physics-based modeling of a bi-layer Al₂O₃/Nb₂O₅ analog memristive device. In IEEE International Symposium on Circuits and Systems, ISCAS 2022, Austin, TX, USA, May 27 - June 1, 2022. pages 1097-1101, IEEE, 2022. [doi]

@inproceedings{SchroedterMHASM22,
  title = {Physics-based modeling of a bi-layer Al₂O₃/Nb₂O₅ analog memristive device},
  author = {Richard Schroedter and Eter Mgeladze and Melanie Herzig and Alon Ascoli and Stefan Slesazeck and Thomas Mikolajick and Ronald Tetzlaff},
  year = {2022},
  doi = {10.1109/ISCAS48785.2022.9937966},
  url = {https://doi.org/10.1109/ISCAS48785.2022.9937966},
  researchr = {https://researchr.org/publication/SchroedterMHASM22},
  cites = {0},
  citedby = {0},
  pages = {1097-1101},
  booktitle = {IEEE International Symposium on Circuits and Systems, ISCAS 2022, Austin, TX, USA, May 27 - June 1, 2022},
  publisher = {IEEE},
  isbn = {978-1-6654-8485-5},
}