A Detailed Analysis of GOS Defects in MOS Transistors: Testing Implications at Circuit Level - researchr publication authors

researchr

You are not signed in
Sign in
Sign up

Jaume Segura, Carol de Benito, A. Rubio, Charles F. Hawkins. A Detailed Analysis of GOS Defects in MOS Transistors: Testing Implications at Circuit Level. In Proceedings IEEE International Test Conference 1995, Driving Down the Cost of Test, Washington, DC, USA, October 21-25, 1995. pages 544-551, IEEE Computer Society, 1995.

This author has not been identified. Look up 'Jaume Segura' in GoogleThis author has not been identified. Look up 'Carol de Benito' in GoogleThis author has not been identified. Look up 'A. Rubio' in GoogleThis author has not been identified. Look up 'Charles F. Hawkins' in Google

runs on WebDSL