A Detailed Analysis of GOS Defects in MOS Transistors: Testing Implications at Circuit Level - researchr publication

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Jaume Segura, Carol de Benito, A. Rubio, Charles F. Hawkins. A Detailed Analysis of GOS Defects in MOS Transistors: Testing Implications at Circuit Level. In Proceedings IEEE International Test Conference 1995, Driving Down the Cost of Test, Washington, DC, USA, October 21-25, 1995. pages 544-551, IEEE Computer Society, 1995.

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