Achim Seidel, Bernhard Wicht. 25.3 A 1.3A gate driver for GaN with fully integrated gate charge buffer capacitor delivering 11nC enabled by high-voltage energy storing. In 2017 IEEE International Solid-State Circuits Conference, ISSCC 2017, San Francisco, CA, USA, February 5-9, 2017. pages 432-433, IEEE, 2017. [doi]
Abstract is missing.