A fully integrated three-level 11.6nC gate driver supporting GaN gate injection transistors

Achim Seidel, Bernhard Wicht. A fully integrated three-level 11.6nC gate driver supporting GaN gate injection transistors. In 2018 IEEE International Solid-State Circuits Conference, ISSCC 2018, San Francisco, CA, USA, February 11-15, 2018. pages 384-386, IEEE, 2018. [doi]

Abstract

Abstract is missing.