Influence of SiC epitaxial wafer quality on yield of 1.2kV SiC-DMOSFETs - researchr publication authors

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Junji Senzaki, Ryoji Kosugi, Keiko Masumoto, Takeshi Mitani, Takeharu Kuroiwa, Hiroshi Yamaguchi. Influence of SiC epitaxial wafer quality on yield of 1.2kV SiC-DMOSFETs. In IEEE International Reliability Physics Symposium, IRPS 2022, Dallas, TX, USA, March 27-31, 2022. pages 63-1, IEEE, 2022. [doi]

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