Junji Senzaki, Ryoji Kosugi, Keiko Masumoto, Takeshi Mitani, Takeharu Kuroiwa, Hiroshi Yamaguchi. Influence of SiC epitaxial wafer quality on yield of 1.2kV SiC-DMOSFETs. In IEEE International Reliability Physics Symposium, IRPS 2022, Dallas, TX, USA, March 27-31, 2022. pages 63-1, IEEE, 2022. [doi]
@inproceedings{SenzakiKMMKY22,
title = {Influence of SiC epitaxial wafer quality on yield of 1.2kV SiC-DMOSFETs},
author = {Junji Senzaki and Ryoji Kosugi and Keiko Masumoto and Takeshi Mitani and Takeharu Kuroiwa and Hiroshi Yamaguchi},
year = {2022},
doi = {10.1109/IRPS48227.2022.9764475},
url = {https://doi.org/10.1109/IRPS48227.2022.9764475},
researchr = {https://researchr.org/publication/SenzakiKMMKY22},
cites = {0},
citedby = {0},
pages = {63},
booktitle = {IEEE International Reliability Physics Symposium, IRPS 2022, Dallas, TX, USA, March 27-31, 2022},
publisher = {IEEE},
isbn = {978-1-6654-7950-9},
}