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A 2.6 e-rms Low-Random-Noise, 116.2 mW Low-Power 2-Mp Global Shutter CMOS Image Sensor with Pixel-Level ADC and In-Pixel Memory

Min-Woong Seo, Myunglae Chu, Hyun-Yong Jung, Suksan Kim, Jiyoun Song, Junan Lee, Sung Yong Kim, Jongyeon Lee, Sung-Jae Byun, Daehee Bae, Minkyung Kim, Gwi-Deok Lee, Heesung Shim, Changyong Um, Changhwa Kim, In-Gyu Baek, Doowon Kwon, Hongki Kim, Hyuksoon Choi, Jonghyun Go, JungChak Ahn, Jaekyu Lee, Changrok Moon, Kyupil Lee, Hyoung-Sub Kim. A 2.6 e-rms Low-Random-Noise, 116.2 mW Low-Power 2-Mp Global Shutter CMOS Image Sensor with Pixel-Level ADC and In-Pixel Memory. In 2021 Symposium on VLSI Circuits, Kyoto, Japan, June 13-19, 2021. pages 1-2, IEEE, 2021. [doi]

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