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Publications by 'Heesung Shim'

Publications

Viewing Publication 1 - 4 from 4

2022

2.45 e-RMS Low-Random-Noise, 598.5 mW Low-Power, and 1.2 kfps High-Speed 2-Mp Global Shutter CMOS Image Sensor With Pixel-Level ADC and MemoryMin-Woong Seo, Myunglae Chu, Hyun-Yong Jung, Suksan Kim, Jiyoun Song, Daehee Bae, Sanggwon Lee, Junan Lee, Sung Yong Kim, Jongyeon Lee, Minkyung Kim, Gwi-Deok Lee, Heesung Shim, Changyong Um, Changhwa Kim, In-Gyu Baek, Doowon Kwon, Hongki Kim, Hyuksoon Choi, Jonghyun Go, JungChak Ahn, Jaekyu Lee, Chang-Rok Moon, Kyupil Lee, Hyoung-Sub Kim. jssc, 57(4):1125-1137, 2022. [doi]

Pose Classification Using Three-Dimensional Atomic Structure-Based Neural Networks Applied to Ion Channel-Ligand DockingHeesung Shim, HyoJin Kim, Jonathan E. Allen, Heike Wulff. jcisd, 62(10):2301-2315, 2022. [doi]

2021

A 2.6 e-rms Low-Random-Noise, 116.2 mW Low-Power 2-Mp Global Shutter CMOS Image Sensor with Pixel-Level ADC and In-Pixel MemoryMin-Woong Seo, Myunglae Chu, Hyun-Yong Jung, Suksan Kim, Jiyoun Song, Junan Lee, Sung Yong Kim, Jongyeon Lee, Sung-Jae Byun, Daehee Bae, Minkyung Kim, Gwi-Deok Lee, Heesung Shim, Changyong Um, Changhwa Kim, In-Gyu Baek, Doowon Kwon, Hongki Kim, Hyuksoon Choi, Jonghyun Go, JungChak Ahn, Jaekyu Lee, Changrok Moon, Kyupil Lee, Hyoung-Sub Kim. vlsic 2021: 1-2 [doi]

2020

- Temporal Noise and -105dB Parasitic Light Sensitivity Backside-Illuminated 2.3µm-Pixel Voltage-Domain Global Shutter CMOS Image Sensor Using High-Capacity DRAM Capacitor TechnologyJaekyu Lee, Seung-Sik Kim, In-Gyu Baek, Heesung Shim, Taehoon Kim, Taehyoung Kim, Jungchan Kyoung, Dongmo Im, Jinyong Choi, KeunYeong Cho, Daehoon Kim, Haemin Lim, Min-Woong Seo, Juyoung Kim, Doowon Kwon, Jiyoun Song, Jiyoon Kim, Minho Jang, Joosung Moon, Hyunchul Kim, Chong Kwang Chang, Jingyun Kim, Kyoungmin Koh, Hanjin Lim, JungChak Ahn, Hyeongsun Hong, Kyupil Lee, Ho-Kyu Kang. isscc 2020: 102-104 [doi]

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