- Temporal Noise and -105dB Parasitic Light Sensitivity Backside-Illuminated 2.3µm-Pixel Voltage-Domain Global Shutter CMOS Image Sensor Using High-Capacity DRAM Capacitor Technology

Jaekyu Lee, Seung-Sik Kim, In-Gyu Baek, Heesung Shim, Taehoon Kim, Taehyoung Kim, Jungchan Kyoung, Dongmo Im, Jinyong Choi, KeunYeong Cho, Daehoon Kim, Haemin Lim, Min-Woong Seo, Juyoung Kim, Doowon Kwon, Jiyoun Song, Jiyoon Kim, Minho Jang, Joosung Moon, Hyunchul Kim, Chong Kwang Chang, Jingyun Kim, Kyoungmin Koh, Hanjin Lim, JungChak Ahn, Hyeongsun Hong, Kyupil Lee, Ho-Kyu Kang. - Temporal Noise and -105dB Parasitic Light Sensitivity Backside-Illuminated 2.3µm-Pixel Voltage-Domain Global Shutter CMOS Image Sensor Using High-Capacity DRAM Capacitor Technology. In 2020 IEEE International Solid- State Circuits Conference, ISSCC 2020, San Francisco, CA, USA, February 16-20, 2020. pages 102-104, IEEE, 2020. [doi]

Abstract

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