2T2M memristor-based memory cell for higher stability RRAM modules

Noha Shaarawy, Maged Ghoneima, Ahmed G. Radwan. 2T2M memristor-based memory cell for higher stability RRAM modules. In 2015 IEEE International Symposium on Circuits and Systems, ISCAS 2015, Lisbon, Portugal, May 24-27, 2015. pages 1418-1421, IEEE, 2015. [doi]

Abstract

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