Ayushparth Sharma, Kusum Lata. Low-leakage and process-variation-tolerant write-read disturb-free 9T SRA cell using CMOS and FinFETs. In 17th International Symposium on Quality Electronic Design, ISQED 2016, Santa Clara, CA, USA, March 15-16, 2016. pages 205-210, IEEE, 2016. [doi]
@inproceedings{SharmaL16-0,
title = {Low-leakage and process-variation-tolerant write-read disturb-free 9T SRA cell using CMOS and FinFETs},
author = {Ayushparth Sharma and Kusum Lata},
year = {2016},
doi = {10.1109/ISQED.2016.7479201},
url = {http://dx.doi.org/10.1109/ISQED.2016.7479201},
researchr = {https://researchr.org/publication/SharmaL16-0},
cites = {0},
citedby = {0},
pages = {205-210},
booktitle = {17th International Symposium on Quality Electronic Design, ISQED 2016, Santa Clara, CA, USA, March 15-16, 2016},
publisher = {IEEE},
isbn = {978-1-5090-1213-8},
}