Low-leakage and process-variation-tolerant write-read disturb-free 9T SRA cell using CMOS and FinFETs - researchr publication

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Ayushparth Sharma, Kusum Lata. Low-leakage and process-variation-tolerant write-read disturb-free 9T SRA cell using CMOS and FinFETs. In 17th International Symposium on Quality Electronic Design, ISQED 2016, Santa Clara, CA, USA, March 15-16, 2016. pages 205-210, IEEE, 2016. [doi]

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