Characteristics of Ni/AlOx/Pt RRAM devices with various dielectric fabrication temperatures

Zong Jie Shen, Chun Zhao, C. Z. Zhao, Ivona Z. Mitrovic, Li Yang, W. Y. Xu, Eng Gee Lim, T. Luo, Y. B. Huang. Characteristics of Ni/AlOx/Pt RRAM devices with various dielectric fabrication temperatures. In International Conference on IC Design and Technology, ICICDT 2019, Suzhou, China, June 17-19, 2019. pages 1-4, IEEE, 2019. [doi]

@inproceedings{ShenZZMYXLLH19,
  title = {Characteristics of Ni/AlOx/Pt RRAM devices with various dielectric fabrication temperatures},
  author = {Zong Jie Shen and Chun Zhao and C. Z. Zhao and Ivona Z. Mitrovic and Li Yang and W. Y. Xu and Eng Gee Lim and T. Luo and Y. B. Huang},
  year = {2019},
  doi = {10.1109/ICICDT.2019.8790838},
  url = {https://doi.org/10.1109/ICICDT.2019.8790838},
  researchr = {https://researchr.org/publication/ShenZZMYXLLH19},
  cites = {0},
  citedby = {0},
  pages = {1-4},
  booktitle = {International Conference on IC Design and Technology, ICICDT 2019, Suzhou, China, June 17-19, 2019},
  publisher = {IEEE},
  isbn = {978-1-7281-1853-6},
}