A 4Mb embedded SLC resistive-RAM macro with 7.2ns read-write random-access time and 160ns MLC-access capability

Shyh-Shyuan Sheu, Meng-Fan Chang, Ku-Feng Lin, Che-Wei Wu, Yu-Sheng Chen, Pi-Feng Chiu, Chia-Chen Kuo, Yih-Shan Yang, Pei-Chia Chiang, Wen-Pin Lin, Che-He Lin, Heng-Yuan Lee, Peiyi Gu, Sumin Wang, Frederick T. Chen, Keng-Li Su, Chen-Hsin Lien, Kuo-Hsing Cheng, Hsin-Tun Wu, Tzu-Kun Ku, Ming-Jer Kao, Ming-Jinn Tsai. A 4Mb embedded SLC resistive-RAM macro with 7.2ns read-write random-access time and 160ns MLC-access capability. In IEEE International Solid-State Circuits Conference, ISSCC 2011, Digest of Technical Papers, San Francisco, CA, USA, 20-24 February, 2011. pages 200-202, IEEE, 2011. [doi]

Abstract

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