2 64Gb multi-level flash memory with 400Mb/s/pin 1.8V Toggle Mode interface

Noboru Shibata, Kazushige Kanda, Toshiki Hisada, Katsuaki Isobe, Manabu Sato, Yui Shimizu, Takahiro Shimizu, Takahiro Sugimoto, Tomohiro Kobayashi, K. Inuzuka, Naoaki Kanagawa, Yasuyuki Kajitani, Takeshi Ogawa, J. Nakai, Kiyoaki Iwasa, Masatsugu Kojima, Toshihiro Suzuki, Yuya Suzuki, Shintaro Sakai, Tomofumi Fujimura, Yuko Utsunomiya, Toshifumi Hashimoto, M. Miakashi, Naoki Kobayashi 0004, M. Inagaki, Yuuki Matsumoto, Satoshi Inoue, Yoshinao Suzuki, D. He, Yasuhiko Honda, Junji Musha, Masaki Nakagawa, Mitsuaki Honma, Naofumi Abiko, Mitsumasa Koyanagi, Masahiro Yoshihara, Kazumi Ino, Mitsuhiro Noguchi, Teruhiko Kamei, Yosuke Kato, Shingo Zaitsu, Hiroaki Nasu, T. Ariki, Hardwell Chibvongodze, Mitsuyuki Watanabe, Hong Ding, Naoki Ookuma, Ryuji Yamashita, G. Liang, Gertjan Hemink, Farookh Moogat, Cuong Trinh, Masaaki Higashitani, Tuan Pham, K. Kanazawa. 2 64Gb multi-level flash memory with 400Mb/s/pin 1.8V Toggle Mode interface. In 2012 IEEE International Solid-State Circuits Conference, ISSCC 2012, San Francisco, CA, USA, February 19-23, 2012. pages 422-424, IEEE, 2012. [doi]

Abstract

Abstract is missing.