A 28nm 10Mb Embedded Flash Memory for IoT Product with Ultra-Low Power Near-1V Supply Voltage and High Temperature for Grade 1 Operation

Hoyoung Shin, Jisung Kim, Shinwuk Kang, Sungung Kwak. A 28nm 10Mb Embedded Flash Memory for IoT Product with Ultra-Low Power Near-1V Supply Voltage and High Temperature for Grade 1 Operation. In IEEE Symposium on VLSI Circuits, VLSI Circuits 2020, Honolulu, HI, USA, June 16-19, 2020. pages 1-2, IEEE, 2020. [doi]

Abstract

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