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The first study of 10nm-class backside defect using Co-Routine based ETL in DRAM

Taesu Shin, Kibum Lee. The first study of 10nm-class backside defect using Co-Routine based ETL in DRAM. In 19th International SoC Design Conference, ISOCC 2022, Gangneung-si, Republic of Korea, October 19-22, 2022. pages 320-321, IEEE, 2022. [doi]

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