M. Sultan M. Siddiqui, Zhao Chuan Lee, Tony Tae-Hyoung Kim. A 16kb column-based split cell-VSS, data-aware write-assisted 9T ultra-low voltage SRAM with enhanced read sensing margin in 28nm FDSOI. In IEEE Asian Solid-State Circuits Conference, A-SSCC 2017, Seoul, Korea (South), November 6-8, 2017. pages 165-168, IEEE, 2017. [doi]
Abstract is missing.