Mahmut E. Sinangil, Hugh Mair, Anantha P. Chandrakasan. A 28nm high-density 6T SRAM with optimized peripheral-assist circuits for operation down to 0.6V. In IEEE International Solid-State Circuits Conference, ISSCC 2011, Digest of Technical Papers, San Francisco, CA, USA, 20-24 February, 2011. pages 260-262, IEEE, 2011. [doi]
Abstract is missing.