Investigation of electrically gate-all-around hexagonal nanowire FET (HexFET) architecture for 5 nm node logic and SRAM applications - researchr publication authors

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Jeffrey A. Smith, Kai Ni, Ram Krishna Ghosh, Jeff Xu, Mustafa Badaroglu, P. R. Chidi Chidambaram, Suman Datta. Investigation of electrically gate-all-around hexagonal nanowire FET (HexFET) architecture for 5 nm node logic and SRAM applications. In 47th European Solid-State Device Research Conference, ESSDERC 2017, Leuven, Belgium, September 11-14, 2017. pages 188-191, IEEE, 2017. [doi]

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