Investigation of electrically gate-all-around hexagonal nanowire FET (HexFET) architecture for 5 nm node logic and SRAM applications

Jeffrey A. Smith, Kai Ni, Ram Krishna Ghosh, Jeff Xu, Mustafa Badaroglu, P. R. Chidi Chidambaram, Suman Datta. Investigation of electrically gate-all-around hexagonal nanowire FET (HexFET) architecture for 5 nm node logic and SRAM applications. In 47th European Solid-State Device Research Conference, ESSDERC 2017, Leuven, Belgium, September 11-14, 2017. pages 188-191, IEEE, 2017. [doi]

@inproceedings{SmithNGXBCD17,
  title = {Investigation of electrically gate-all-around hexagonal nanowire FET (HexFET) architecture for 5 nm node logic and SRAM applications},
  author = {Jeffrey A. Smith and Kai Ni and Ram Krishna Ghosh and Jeff Xu and Mustafa Badaroglu and P. R. Chidi Chidambaram and Suman Datta},
  year = {2017},
  doi = {10.1109/ESSDERC.2017.8066623},
  url = {https://doi.org/10.1109/ESSDERC.2017.8066623},
  researchr = {https://researchr.org/publication/SmithNGXBCD17},
  cites = {0},
  citedby = {0},
  pages = {188-191},
  booktitle = {47th European Solid-State Device Research Conference, ESSDERC 2017, Leuven, Belgium, September 11-14, 2017},
  publisher = {IEEE},
  isbn = {978-1-5090-5978-2},
}