Dong-Hyeok Son, Young-woo Jo, Ryun-Hwi Kim, Chan Heo, Jae Hwa Seo, Jin-Su Kim, In Man Kang, Sorin Cristoloveanu, Jung Hee Lee. Fabrication of high performance AlGaN/GaN FinFET by utilizing anisotropic wet etching in TMAH solution. In 45th European Solid State Device Research Conference, ESSDERC 2015, Graz, Austria, September 14-18, 2015. pages 130-133, IEEE, 2015. [doi]
@inproceedings{SonJKHSKKCL15,
title = {Fabrication of high performance AlGaN/GaN FinFET by utilizing anisotropic wet etching in TMAH solution},
author = {Dong-Hyeok Son and Young-woo Jo and Ryun-Hwi Kim and Chan Heo and Jae Hwa Seo and Jin-Su Kim and In Man Kang and Sorin Cristoloveanu and Jung Hee Lee},
year = {2015},
doi = {10.1109/ESSDERC.2015.7324730},
url = {http://dx.doi.org/10.1109/ESSDERC.2015.7324730},
researchr = {https://researchr.org/publication/SonJKHSKKCL15},
cites = {0},
citedby = {0},
pages = {130-133},
booktitle = {45th European Solid State Device Research Conference, ESSDERC 2015, Graz, Austria, September 14-18, 2015},
publisher = {IEEE},
isbn = {978-1-4673-7135-3},
}