A 1.1 V 2y-nm 4.35 Gb/s/pin 8 Gb LPDDR4 Mobile Device With Bandwidth Improvement Techniques

Keunsoo Song, Sangkwon Lee, Dongkyun Kim, Youngbo Shim, Sangil Park, Bokrim Ko, Duckhwa Hong, Yongsuk Joo, Wooyoung Lee, Yongdeok Cho, Wooyeol Shin, Jaewoong Yun, Hyengouk Lee, Jeonghun Lee, Eunryeong Lee, Namkyu Jang, Jaemo Yang, Haekang Jung, Joohwan Cho, Hyeongon Kim, Jinkook Kim. A 1.1 V 2y-nm 4.35 Gb/s/pin 8 Gb LPDDR4 Mobile Device With Bandwidth Improvement Techniques. J. Solid-State Circuits, 50(8):1945-1959, 2015. [doi]

Abstract

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