A 1.1V 2y-nm 4.35Gb/s/pin 8Gb LPDDR4 mobile device with bandwidth improvement techniques

Keunsoo Song, Sangkwon Lee, Dongkyun Kim, Youngbo Shim, Sangil Park, Bokrim Ko, Duckhwa Hong, Yongsuk Joo, Wooyoung Lee, Yongdeok Cho, Wooyeol Shin, Jaewoong Yun, Hyengouk Lee, Jeonghun Lee, Eunryeong Lee, Jaemo Yang, Haekang Jung, Namkyu Jang, Joohwan Cho, Hyeongon Kim. A 1.1V 2y-nm 4.35Gb/s/pin 8Gb LPDDR4 mobile device with bandwidth improvement techniques. In Proceedings of the IEEE 2014 Custom Integrated Circuits Conference, CICC 2014, San Jose, CA, USA, September 15-17, 2014. pages 1-4, IEEE, 2014. [doi]

Abstract

Abstract is missing.