17.1 A 10nm FinFET 128Mb SRAM with assist adjustment system for power, performance, and area optimization - researchr publication authors

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Taejoong Song, Woojin Rim, Sunghyun Park, Yongho Kim, Jonghoon Jung, Giyong Yang, Sanghoon Baek, Jaeseung Choi, Bongjae Kwon, Yunwoo Lee, Sungbong Kim, Gyu-Hong Kim, Hyo-Sig Won, Ja-Hum Ku, Sunhom Steve Paak, E. S. Jung, Steve Sungho Park, Kinam Kim. 17.1 A 10nm FinFET 128Mb SRAM with assist adjustment system for power, performance, and area optimization. In 2016 IEEE International Solid-State Circuits Conference, ISSCC 2016, San Francisco, CA, USA, January 31 - February 4, 2016. pages 306-307, IEEE, 2016. [doi]

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