A 4-bit Calibration-Free Computing-In-Memory Macro With 3T1C Current-Programed Dynamic-Cascode Multi-Level-Cell eDRAM

Jiahao Song, Xiyuan Tang, Haoyang Luo, Haoyi Zhang, Xin Qiao, Zixuan Sun, Xiangxing Yang, Zihan Wu, Yuan Wang, Runsheng Wang, Ru Huang. A 4-bit Calibration-Free Computing-In-Memory Macro With 3T1C Current-Programed Dynamic-Cascode Multi-Level-Cell eDRAM. J. Solid-State Circuits, 59(3):842-854, March 2024. [doi]

@article{SongTLZQSYWWWH24,
  title = {A 4-bit Calibration-Free Computing-In-Memory Macro With 3T1C Current-Programed Dynamic-Cascode Multi-Level-Cell eDRAM},
  author = {Jiahao Song and Xiyuan Tang and Haoyang Luo and Haoyi Zhang and Xin Qiao and Zixuan Sun and Xiangxing Yang and Zihan Wu and Yuan Wang and Runsheng Wang and Ru Huang},
  year = {2024},
  month = {March},
  doi = {10.1109/JSSC.2023.3339887},
  url = {https://doi.org/10.1109/JSSC.2023.3339887},
  researchr = {https://researchr.org/publication/SongTLZQSYWWWH24},
  cites = {0},
  citedby = {0},
  journal = {J. Solid-State Circuits},
  volume = {59},
  number = {3},
  pages = {842-854},
}