A 4-bit Calibration-Free Computing-In-Memory Macro With 3T1C Current-Programed Dynamic-Cascode Multi-Level-Cell eDRAM

Jiahao Song, Xiyuan Tang, Haoyang Luo, Haoyi Zhang, Xin Qiao, Zixuan Sun, Xiangxing Yang, Zihan Wu, Yuan Wang, Runsheng Wang, Ru Huang. A 4-bit Calibration-Free Computing-In-Memory Macro With 3T1C Current-Programed Dynamic-Cascode Multi-Level-Cell eDRAM. J. Solid-State Circuits, 59(3):842-854, March 2024. [doi]

Abstract

Abstract is missing.