30.5 A Variation-Tolerant In-eDRAM Continuous-Time Ising Machine Featuring 15-Level Coefficients and Leaked Negative-Feedback Annealing

Jiahao Song, Zihan Wu, Xiyuan Tang, Bocheng Xu, Haoyang Luo, Youming Yang, Yuan Wang 0001, Runsheng Wang, Ru Huang. 30.5 A Variation-Tolerant In-eDRAM Continuous-Time Ising Machine Featuring 15-Level Coefficients and Leaked Negative-Feedback Annealing. In IEEE International Solid-State Circuits Conference, ISSCC 2024, San Francisco, CA, USA, February 18-22, 2024. pages 490-492, IEEE, 2024. [doi]

Abstract

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