Tathagata Srimani, A. C. Yu, Robert M. Radway, D. T. Rich, M. Nelson, S. Wong, D. Murphy, S. Fuller, Gage Hills, S. Mitra, Max M. Shulaker. Foundry Monolithic 3D BEOL Transistor + Memory Stack: Iso-performance and Iso-footprint BEOL Carbon Nanotube FET+RRAM vs. FEOL Silicon FET+RRAM. In 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), Kyoto, Japan, June 11-16, 2023. pages 1-2, IEEE, 2023. [doi]
@inproceedings{SrimaniYRRNWMFH23,
title = {Foundry Monolithic 3D BEOL Transistor + Memory Stack: Iso-performance and Iso-footprint BEOL Carbon Nanotube FET+RRAM vs. FEOL Silicon FET+RRAM},
author = {Tathagata Srimani and A. C. Yu and Robert M. Radway and D. T. Rich and M. Nelson and S. Wong and D. Murphy and S. Fuller and Gage Hills and S. Mitra and Max M. Shulaker},
year = {2023},
doi = {10.23919/VLSITechnologyandCir57934.2023.10185414},
url = {https://doi.org/10.23919/VLSITechnologyandCir57934.2023.10185414},
researchr = {https://researchr.org/publication/SrimaniYRRNWMFH23},
cites = {0},
citedby = {0},
pages = {1-2},
booktitle = {2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), Kyoto, Japan, June 11-16, 2023},
publisher = {IEEE},
isbn = {978-4-86348-806-9},
}