Ultra-low Leakage IGZO-TFTs with Raised Source/Drain for Vt > 0 V and Ion > 30 µA/µm

S. Subhechha, Nouredine Rassoul, A. Belmonte, H. Hody, Harold Dekkers, Michiel J. van Setten, Adrian Chasin, Shamin H. Sharifi, S. Sutar, L. Magnarin, Umberto Celano, H. Puliyalil, S. Kundu, M. Pak, Lieve Teugels, D. Tsvetanova, N. Bazzazian, Kevin Vandersmissen, C. Biasotto, D. Batuk, J. Geypen, J. Heijlen, Romain Delhougne, Gouri Sankar Kar. Ultra-low Leakage IGZO-TFTs with Raised Source/Drain for Vt > 0 V and Ion > 30 µA/µm. In IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), Honolulu, HI, USA, June 12-17, 2022. pages 292-293, IEEE, 2022. [doi]

@inproceedings{SubhechhaRBHDSC22,
  title = {Ultra-low Leakage IGZO-TFTs with Raised Source/Drain for Vt > 0 V and Ion > 30 µA/µm},
  author = {S. Subhechha and Nouredine Rassoul and A. Belmonte and H. Hody and Harold Dekkers and Michiel J. van Setten and Adrian Chasin and Shamin H. Sharifi and S. Sutar and L. Magnarin and Umberto Celano and H. Puliyalil and S. Kundu and M. Pak and Lieve Teugels and D. Tsvetanova and N. Bazzazian and Kevin Vandersmissen and C. Biasotto and D. Batuk and J. Geypen and J. Heijlen and Romain Delhougne and Gouri Sankar Kar},
  year = {2022},
  doi = {10.1109/VLSITechnologyandCir46769.2022.9830448},
  url = {https://doi.org/10.1109/VLSITechnologyandCir46769.2022.9830448},
  researchr = {https://researchr.org/publication/SubhechhaRBHDSC22},
  cites = {0},
  citedby = {0},
  pages = {292-293},
  booktitle = {IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), Honolulu, HI, USA, June 12-17, 2022},
  publisher = {IEEE},
  isbn = {978-1-6654-9772-5},
}