Feasible approach to the fabrication of asymmetric Schottky barrier MOSFETs by using the spacer technique

L. Sun, D. Y. Li, X. Y. Liu, R. Q. Han. Feasible approach to the fabrication of asymmetric Schottky barrier MOSFETs by using the spacer technique. Microelectronics Journal, 37(4):332-335, 2006. [doi]

Abstract

Abstract is missing.