Investigation of Hot Carrier Enhanced Body Bias Effect in Advanced FinFET Technology - researchr publication authors

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Zixuan Sun, Haoran Lu, Yongkang Xue, Wenpu Luo, Zirui Wang, Jiayang Zhang, Zhigang Ji, Runsheng Wang, Ru Huang. Investigation of Hot Carrier Enhanced Body Bias Effect in Advanced FinFET Technology. In IEEE International Reliability Physics Symposium, IRPS 2023, Monterey, CA, USA, March 26-30, 2023. pages 1-6, IEEE, 2023. [doi]

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